Structure for strained channel field effect transistor pair having a member and a contact via
US7098536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2004 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Nov 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure is provided which includes a semiconductor device region including a first portion and a second portion. A current-conducting member is provided, which extends horizontally over the first portion but not over the second portion. A first film, such as a stress-imparting film, extends over the second portion and only partially over the current-conducting member to expose a contact portion of the member. A first contact via is provided in conductive communication with the contact portion of the member, the first contact via having a self-aligned silicide-containing region. A second contact via is provided in conductive communication with the second portion of the semiconductor device region, the second contact via extending through the first film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.