Inventor · Wappingers Falls, NY, US

Haining Yang

277Patents

24h-index

142Co-inventors

93Inventor score

Filing activity: Jan 20, 1998 → Apr 30, 2021

Most-cited inventions

Patent	Title	Area	Cited by	Status
US7625790B2	FinFET with sublithographic fin width	Electricity	114	Active
US6891192B2	Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions	Electricity	114	Expired
US7791109B2	Metal silicide alloy local interconnect	Emerging Cross-Sectional Technologies	108	Active
US6881635B1	Strained silicon NMOS devices with embedded source/drain	Electricity	102	Expired
US7553760B2	Sub-lithographic nano interconnect structures, and method for forming same	Electricity	101	Active
US7816231B2	Device structures including backside contacts, and methods for forming same	Electricity	99	Active
US6524867B2	Method for forming platinum-rhodium stack as an oxygen barrier	Electricity	88	Expired
US7605081B2	Sub-lithographic feature patterning using self-aligned self-assembly polymers	Electricity	87	Active
US7592247B2	Sub-lithographic local interconnects, and methods for forming same	Electricity	71	Active
US7557424B2	Reversible electric fuse and antifuse structures for semiconductor devices	Electricity	67	Active
US7767099B2	Sub-lithographic interconnect patterning using self-assembling polymers	Emerging Cross-Sectional Technologies	67	Active
US7514339B2	Method for fabricating shallow trench isolation structures using diblock copolymer patterning	Electricity	56	Active
US8083958B2	Patterning method using a combination of photolithography and copolymer self-assemblying lithography techniques	Emerging Cross-Sectional Technologies	56	Active
US6518610B2	Rhodium-rich oxygen barriers	Electricity	53	Expired
US6939814B2	Increasing carrier mobility in NFET and PFET transistors on a common wafer	Electricity	51	Expired
US6946709B2	Complementary transistors having different source and drain extension spacing controlled by different spacer sizes	Electricity	34	Expired
US7781847B2	Device patterned with sub-lithographic features with variable widths	Emerging Cross-Sectional Technologies	33	Active
US7984408B2	Structures incorporating semiconductor device structures with reduced junction capacitance and drain induced barrier lowering	Electricity	31	Active
US6906360B2	Structure and method of making strained channel CMOS transistors having lattice-mismatched epitaxial extension and source and drain regions	Electricity	30	Expired
US7867832B2	Electrical fuse and method of making	Electricity	29	Active
US7098536B2	Structure for strained channel field effect transistor pair having a member and a contact via	Electricity	27	Expired
US7002209B2	MOSFET structure with high mechanical stress in the channel	Electricity	26	Expired
US7737501B2	FinFET SRAM with asymmetric gate and method of manufacture thereof	Electricity	25	Active
US7193254B2	Structure and method of applying stresses to PFET and NFET transistor channels for improved performance	Electricity	25	Expired
US6660581B1	Method of forming single bitline contact using line shape masks for vertical transistors in DRAM/e-DRAM devices	Electricity	23	Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.