Titanium silicate films with high dielectric constant
US7101754B2 · kind B2 · utility
1Cited by
16References
22Claims
0Family size
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Key dates
| Filing date | Jun 10, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Jun 10, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/113
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a film with a high dielectric constant uses a spin-on sol-gel process to deposit the film on a substrate, the film having a composition (SiO2)x(TiO2)1−x, where 0.50<x<0.75. The resulting film is annealed in an oxygen-containing atmosphere at a temperature lying in the range of 500° C. to 700° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.