Means for forming SOI
US7101772B2 · kind B2 · utility
4Cited by
16References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2001 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Sep 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a SOI structure in which porous silicon is sealed and an epitaxial layer is grown thereover, followed by implantation of oxygen and annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.