Method of forming a robust copper interconnect by dilute metal doping
US7101790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2003 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Mar 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper filled semiconductor feature and method of forming the same having improved bulk properties the method including providing a semiconductor process wafer having a process surface including an opening for forming a semiconductor feature; depositing at least one metal dopant containing layer over the opening to form a thermally diffusive relationship to a subsequently deposited copper layer; depositing said copper layer to substantially fill the opening; and, thermally treating the semiconductor process wafer for a time period sufficient to distribute at least a portion of the metal dopants to collect along at least a portion of the periphery of said copper layer including a portion of said copper layer grain boundaries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.