Coated semiconductor wafer, and process and device for producing the semiconductor wafer

US7101794B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Reinhard Schauer · Laufen, DE
• Norbert Werner · Dodge City, US

Key dates

• Filing date: May 26, 2004
• Grant date: Sep 5, 2006
• Expiry date: May 26, 2024

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/12
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A susceptor for a semiconductor wafer to be placed on during deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD), has a gas-permeable structure with a porosity of at least 15% and a density of from 0.5 to 1.5 g/cm3. There is also a semiconductor wafer having a back surface and a front surface which has been coated by chemical vapor deposition (CVD) and a polished or etched back surface. The nanotopography of the back surface, expressed as the height fluctuation PV (=peak to valley), is less than 5 nm. There is a process for producing the semiconductor wafer.