Memory elements using organic active layer
US7102156B1 · kind B1 · utility
3Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Dec 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element includes a first electrode, a passive layer on and in contact with the first electrode, a polyfluorene active layer on and in contact with the active layer, and a second electrode on and in contact with the polyfluorene active layer. The chemical structure of the polyfluorene active layer may be altered to take different forms, each providing a different memory element operating characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.