Stuart Spitzer
16Patents
7h-index
15Co-inventors
55Inventor score
Filing activity: Jul 1, 2004 → May 22, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7289353B2 | Systems and methods for adjusting programming thresholds of polymer memory cells | Physics | 89 | Expired |
| US7221599B1 | Polymer memory cell operation | Physics | 88 | Expired |
| US7122853B1 | Method to improve yield and simplify operation of polymer memory cells | Electricity | 85 | Expired |
| US7154769B2 | Memory device including barrier layer for improved switching speed and data retention | Physics | 12 | Expired |
| US7199394B2 | Polymer memory device with variable period of retention time | Electricity | 11 | Expired |
| US7307338B1 | Three dimensional polymer memory cell systems | Electricity | 11 | Expired |
| US7450416B1 | Utilization of memory-diode which may have each of a plurality of different memory states | Physics | 7 | Expired |
| US7157732B2 | Switchable memory diode-a new memory device | Electricity | 6 | Expired |
| US7981773B2 | Switchable memory diode—a new memory device | Electricity | 5 | Active |
| US7379317B2 | Method of programming, reading and erasing memory-diode in a memory-diode array | Physics | 4 | Expired |
| US7269050B2 | Method of programming a memory device | Physics | 3 | Expired |
| US7102156B1 | Memory elements using organic active layer | Electricity | 3 | Expired |
| US7378682B2 | Memory element using active layer of blended materials | Electricity | 2 | Expired |
| US7344913B1 | Spin on memory cell active layer doped with metal ions | Electricity | 1 | Expired |
| US8274073B2 | Memory device with improved switching speed and data retention | Electricity | 0 | Active |
| US7550761B2 | Switchable memory diode—a new memory device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.