Nitride semiconductor device and method of manufacturing the same
US7102173B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 8, 2005 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Mar 8, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/759
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.