Siltron, Inc.
52Patents
35Active
52Granted
46Portfolio score
Filing activity: Dec 22, 2000 → Apr 9, 2012 · 28 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6884694B2 | Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6527859B2 | Apparatus for growing a single crystalline ingot | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7338882B2 | Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7102173B2 | Nitride semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7242075B2 | Silicon wafers and method of fabricating the same | Electricity | 5 | Expired |
| US7732352B2 | Silicon wafers and method of fabricating the same | Electricity | 5 | Active |
| US7615470B2 | Method of manufacturing gallium nitride semiconductor | Electricity | 5 | Active |
| US6521316B2 | single crystalline silicon wafer, ingot, and producing method thereof | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7559988B2 | Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot | Emerging Cross-Sectional Technologies | 5 | Active |
| US8414360B2 | Double side polishing apparatus and carrier therefor | Performing Operations; Transporting | 4 | Active |
| US6818569B2 | Method of fabricating annealed wafer | Electricity | 4 | Expired |
| US7708832B2 | Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate | Chemistry; Metallurgy | 4 | Active |
| US7723217B2 | Method for manufacturing gallium nitride single crystalline substrate using self-split | Chemistry; Metallurgy | 3 | Active |
| US7261099B2 | Apparatus and method for slicing an ingot | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6899760B2 | Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8114215B2 | 2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor | Emerging Cross-Sectional Technologies | 3 | Active |
| US7416603B2 | High quality single crystal and method of growing the same | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7326292B2 | Quality evaluation method for single crystal ingot | Emerging Cross-Sectional Technologies | 3 | Active |
| US6858077B2 | Single crystalline silicon wafer, ingot, and producing method thereof | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6574264B2 | Apparatus for growing a silicon ingot | Chemistry; Metallurgy | 2 | Expired |
| US8198649B2 | Compound semiconductor substrate grown on metal layer, method for manufacturing the same, and compound semiconductor device using the same | Electricity | 2 | Active |
| US8398464B2 | Grinding wheel truing tool and manufacturing method thereof, and truing apparatus, method for manufacturing grinding wheel and wafer edge grinding apparatus using the same | Performing Operations; Transporting | 2 | Active |
| US7378071B2 | Silicon wafer and method for producing silicon single crystal | Chemistry; Metallurgy | 1 | Expired |
| US8821219B2 | Wafer unloading system and wafer processing equipment including the same | Performing Operations; Transporting | 1 | Active |
| US7608145B2 | Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.