Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
US7102924B2 · kind B2 · utility
91Cited by
26References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 3, 2005 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Jan 3, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.