Phase-changeable memory devices
US7105870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2005 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Jun 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable memory element having a first terminal electrically coupled to a terminal of the phase-changeable diode. This phase-changeable diode may include a lower electrode pattern on the semiconductor substrate, a first phase-changeable pattern on the lower electrode pattern and a gate switching layer pattern on the first phase-changeable pattern. The phase-changeable memory element includes a second phase-changeable pattern electrically coupled to the terminal of the phase-changeable diode and a memory switching layer pattern on the second phase-changeable pattern. The memory switching layer pattern may include a composite of a titanium layer pattern contacting the phase-changeable memory element and a titanium nitride layer pattern contacting the titanium layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.