Patent · US Expired

Epitaxial SiOx barrier/insulation layer

US7105895B2 · kind B2 · utility

104Cited by
22References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 14, 2001
Grant dateSep 12, 2006
Priority date—
Expiry dateJun 14, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for producing an insulating or barrier layer (FIG. 1B), useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on a silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer. Alternatively, a monolayer of one or more elements, preferably comprising oxygen, is absorbed on a silicon substrate. A plurality of insulating layers sandwiched between epitaxial silicon forms a barrier composite. Semiconductor devices are disclosed which comprise said barrier composite.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.