Methods and structures for electrical communication with an overlying electrode for a semiconductor element

US7105903B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Brian R. Butcher · Gilbert, US
• Gregory W. Grynkewich · Gilbert, US
• Kelly Kyler · Mesa, US
• Kenneth Smith · Chandler, US
• Richard Williams · Chandler, US

Key dates

• Filing date: Nov 18, 2004
• Grant date: Sep 12, 2006
• Expiry date: Nov 18, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/20

Abstract

Structures for electrical communication with an overlying electrode for a semiconductor element and methods for fabricating such structures are provided. The structure for electrical communication with an overlying electrode comprises a first electrode having a lateral dimension, a semiconductor element overlying the first electrode, and a second electrode overlying the semiconductor element. The second electrode has a lateral dimension that is less than the lateral dimension of the first electrode. A conductive hardmask overlies the second electrode and is in electrical communication with the second electrode. The conductive hardmask has a lateral dimension that is substantially equal to the lateral dimension of the first electrode. A conductive contact element is in electrical communication with the conductive hardmask.