Semiconductor device having SOI construction
US7105910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2004 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Nov 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor substrate including a first semiconductor layer, an insulation layer and a second semiconductor layer, which are laminated in this order; a trench penetrating both of the second semiconductor layer and the insulation layer and reaching the first semiconductor layer; and a third semiconductor layer. The trench has a ring shape on a principal surface of the substrate so that a part of the second semiconductor layer and a part of the insulation layer are surrounded with the trench. The third semiconductor layer is disposed in the trench through a first insulation film disposed on a sidewall of the trench so that the third semiconductor layer contacts the first semiconductor layer at a bottom of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.