Optical semiconductor device with multiple quantum well structure

US7106090B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Volker Harle · Hemau, DE
• Berthold Hahn · Hemau, DE
• Hans-Jürgen Lugauer · Sinzing, DE
• Helmut Bolay · Nittendorf, DE
• Stefan Bader · Fort Collins, US
• Dominik Eisert · Regensberg, DE
• Uwe Strauss · Bad Abbach, DE
• Johannes Volkl · Erlangen, DE
• Ulrich Zehnder · Regensburg, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Andreas Weimer · Regensburg, DE

Key dates

• Filing date: Dec 16, 2004
• Grant date: Sep 12, 2006
• Expiry date: Dec 16, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3408
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.