Semiconductor laser devices
US7106775B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2004 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Nov 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0287
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A low reflective film is formed of, in sequence from a side in contact with a laser chip, a first dielectric film of a refractive index n1 and a thickness d1, a second dielectric film of a refractive index n2 and a thickness d2, a third dielectric film of a refractive index n3 and a thickness d3, and a fourth dielectric film of a refractive index n4 and a thickness d4, specifically, aluminum oxide Al2O3 with a refractive index n1=1.638 is used for the first dielectric film, silicon oxide SiO2 with a refractive index n2=n4=1.489 for the second and fourth dielectric films, tantalum oxide Ta2O5 with a refractive index n3=2.063 for the third dielectric film, respectively, resulting in a semiconductor laser device with a reflectance which is stably controllable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.