Silicon fixture with roughened surface supporting wafers in chemical vapor deposition
US7108746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2001 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Jun 12, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon-based wafer support tower particularly useful for batch-mode thermal chemical vapor deposition. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. The surface roughness may be in the range of 250 to 2500 μm. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. Tubular silicon members are advantageously formed by extrusion from a silicon melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.