Silicon etching method
US7109123B2 · kind B2 · utility
2Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2003 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Apr 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.