System and method for hydrogen-rich selective oxidation
US7109131B2 · kind B2 · utility
5Cited by
13References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2003 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Jun 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.