High Ion/Ioff SOI MOSFET using body voltage control
US7109532B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Dec 23, 2003 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Feb 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/711
Abstract
A semiconductor device may comprise a partially-depleted SOI MOSFET having a floating body region disposed between a source and drain. The floating body region may be driven to receive injected carriers for adjusting its potential during operation of the MOSFET. In a particular case, the MOSFET may comprise another region of semiconductor material in contiguous relationship with a drain/source region of the MOSFET and on a side thereof opposite to the body region. This additional region may be formed with a conductivity of type opposite the drain/source, and may establish an effective bipolar device per the body, the drain/source and the additional region. The geometries and doping thereof may be designed to establish a transport gain of magnitude sufficient to assist the injection of carriers into the floating body region, yet small enough to guard against inter-latching with the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.