Multiple-bit magnetic random access memory cell employing adiabatic switching
US7109539B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 26, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Sep 4, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5616
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multiple-bit memory cell for use in a magnetic random access memory circuit includes a first adiabatic switching storage element having a first anisotropy axis associated therewith and a second adiabatic switching storage element having a second anisotropy axis associated therewith. The first and second anisotropy axes are oriented at a substantially non-zero angle relative to at least one bit line and at least one word line corresponding to the memory cell. The memory cell is configured such that two quadrants of a write plane not used for writing one of the storage elements can be beneficially utilized to write the other storage element so that there is essentially no loss of write margin in the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.