Nitrided ultra thin gate dielectrics
US7109559B2 · kind B2 · utility
5Cited by
17References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Nov 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.