Beth Ward
9Patents
4h-index
17Co-inventors
46Inventor score
Filing activity: Mar 10, 2001 → Jul 16, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6893979B2 | Method for improved plasma nitridation of ultra thin gate dielectrics | Electricity | 9 | Expired |
| US7291568B2 | Method for fabricating a nitrided silicon-oxide gate dielectric | Electricity | 8 | Expired |
| US7109559B2 | Nitrided ultra thin gate dielectrics | Electricity | 5 | Expired |
| US6706644B2 | Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors | Electricity | 5 | Expired |
| US6670263B2 | Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size | Electricity | 4 | Expired |
| US6893948B2 | Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size | Electricity | 2 | Expired |
| US8709887B2 | Method for fabricating a nitrided silicon-oxide gate dielectric | Electricity | 0 | Active |
| US6909157B2 | Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors | Electricity | 0 | Expired |
| US7714366B2 | CMOS transistor with a polysilicon gate electrode having varying grain size | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.