Patent · US Expired

Well bias voltage generator

US7109782B2 · kind B2 · utility

5Cited by
7References
17Claims
0Family size

Assignee

Inventor

Key dates

Filing dateOct 5, 2004
Grant dateSep 19, 2006
Priority date
Expiry dateFeb 12, 2025

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C5/145
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A well bias module outputs a voltage used to bias the wells of transistors or other semiconductor components. The well bias module includes a feedback loop having a voltage generation module and a subthreshold leakage sense module that is operable to model the transistors or other semiconductor components so as to sense the subthreshold leakage resulting from a particular well bias voltage output by the voltage generation module. The subthreshold leakage sense module provides a representation of the sensed subthreshold leakage to the voltage generation module, which adjusts the magnitude of the well bias voltage based on this representation so as to reduce or minimize the subthreshold leakage in the transistors or other semiconductor components.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.