Magnetic nonvolatile memory cell and magnetic random access memory using the same
US7110284B2 · kind B2 · utility
36Cited by
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20Claims
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Key dates
| Filing date | Sep 1, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Mar 3, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic nonvolatile memory cell includes a C-MOSFET, a spin torque magnetization inversion layer and a tunneling magnetoresistive layer arranged in this order. The memory cell has the function of spin torque magnetization inversion and consumes very low power. A random access memory includes a plurality of the memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.