Phase-change memory device and method of writing a phase-change memory device
US7110286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Mar 12, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change cell memory device includes a plurality of phase-change memory cells, an address circuit, a write driver, and a write driver control circuit. The phase-change memory cells each include a volume of material that is programmable between amorphous and crystalline states. The address circuit selects at least one of the memory cells, and the write driver generates a reset pulse current to program a memory cell selected by the address circuit into the amorphous state, and a set pulse current to program the memory cell selected by the address circuit into the crystalline state. The write driver control circuit varies at least one of a pulse width and a pulse count of at least one of the reset and set pulse currents according to a load between the write driver and the memory cell selected by the address circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.