Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
US7110287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Jul 21, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, spacer, free, and heat assisted switching layers. The spacer layer resides between the pinned and free layers. The free layer resides between the spacer and heat assisted switching layers. The heat assisted switching layer improves thermal stability of the free layer when the free layer is not being switched, preferably via an exchange coupling. The free layer is switched using spin transfer when a write current is passed through the magnetic element. The write current preferably provides heat that reduces the heat assisted switching layer's stabilization of the free layer. In another aspect, the magnetic element also includes second free, a second spacer, and second pinned layers. The heat assisted switching layer resides between the two free layers, which are magnetostatically coupled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.