Passivation of material using ultra-fast pulsed laser
US7112545B1 · kind B1 · utility
21Cited by
9References
15Claims
0Family size
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Key dates
| Filing date | Sep 11, 2000 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Aug 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.