Ion implanting apparatus and ion implanting method using the same
US7112810B2 · kind B2 · utility
1Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2004 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Nov 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.