Magnetic tunnel junction cap structure and method for forming the same
US7112861B2 · kind B2 · utility
25Cited by
1References
6Claims
0Family size
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Key dates
| Filing date | May 14, 2004 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Jan 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A a magnetic random access memory (MRAM) device includes a cap layer formed over a magnetic tunnel junction (MTJ) stack layer, an etch stop layer formed over the first cap layer, and a hardmask layer formed over the etch stop layer. The etch stop layer is selected from a material such that an etch chemistry used for removing the hardmask layer has selectivity against etching the etch stop layer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.