Structures and methods for heat dissipation of semiconductor integrated circuits
US7112882B2 · kind B2 · utility
24Cited by
19References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 25, 2004 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Aug 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16152
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and methods for semiconductor integrated circuits with respect to heat dissipation are provided. The structure comprises a die having a first surface and a second surface. The first surface has an opening in it, and the second surface has a contact pad formed on it. The first surface is opposite to the second surface. A conductive layer is formed over the first surface, covering a surface of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.