Method for detecting epitaxial (EPI) induced buried layer shifts in semiconductor devices
US7112953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2005 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Apr 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for monitoring a shift in a buried layer in a semiconductor device. The method for monitoring the shift in the buried layer, among other steps, includes forming a buried layer test structure in, on or over a substrate of a semiconductor device, the buried layer test structure including a first test buried layer located in or on the substrate, the first test buried layer shifted a predetermined distance with respect to a first test feature. The buried layer test structure further includes a second test buried layer lodated in the substrate, the second test buried layer shifted a predetermined but different distance with respect to a second test feature. The method for monitoring the shift in the buried layer may further include applying a test signal to the buried layer test structure to determine an actual shift relative to the predetermined shift.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.