Xinfen Chen
7Patents
2h-index
16Co-inventors
40Inventor score
Filing activity: Feb 2, 2005 → Aug 7, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8264038B2 | Buried floating layer structure for improved breakdown | Electricity | 18 | Active |
| US7118959B2 | Integrated circuit capacitor having antireflective dielectric | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8110414B2 | Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodes | Electricity | 1 | Active |
| US8551886B2 | CMP process for processing STI on two distinct silicon planes | Electricity | 0 | Active |
| US7112953B2 | Method for detecting epitaxial (EPI) induced buried layer shifts in semiconductor devices | Electricity | 0 | Expired |
| US7595525B2 | Integrated circuit capacitor having antireflective dielectric | Emerging Cross-Sectional Technologies | 0 | Active |
| US8148228B2 | Surface patterned topography feature suitable for planarization | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.