Method and apparatus to remotely sense the temperature of a power semiconductor
US7113019B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2005 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Aug 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0027
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Apparatus for indirectly sensing the temperature of a power MOS device comprising a power MOS device having a current sense circuit for sensing the current in the power MOS device, a circuit for producing a voltage related to the drain-source voltage of the power MOS device, a comparator coupled to receive at a first input the voltage related to the drain-source voltage of the power MOS device and at a second input a voltage related to the current in the power MOS device, the comparator generating an overtemperature protection signal when a predetermined inequality between the voltages at the first and second inputs to the comparator occurs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.