Method of forming barrier layer
US7115214B2 · kind B2 · utility
0Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | May 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
First, a substrate having at least a conducting layer is provided. Then, a CVD process is performed to form the Ti/TiN barrier layer onto the conducting layer. An examination procedure is followed, and if particles are detected in the Ti/TiN barrier layer, then a rework procedure is performed to remove the Ti/TiN barrier layer and to reform a new Ti/TiN barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.