Red light-emitting device and method for preparing the same
US7115427B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Sep 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in an oxygen atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 3 and 5 nanometers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.