Semiconductor structures for gallium nitride-based devices

US7115896B2 · kind B2 · utility

Assignee

• EMCORE CORPORATION · US

Inventors

• Shiping Guo · Fryeburg, US
• David W. Gotthold · Lino Lakes, US
• Milan Pophristic · New Brunswick, US
• Boris Peres · Jersey City, US
• Ivan Eliashevich · Maplewood, US
• Bryan Shelton · Bound Brook, US
• Alex Ceruzzi · Princeton Junction, US
• Michael Murphy · Long Beach, US
• Richard A. Stall · Montgomery, US

Key dates

• Filing date: Nov 25, 2003
• Grant date: Oct 3, 2006
• Expiry date: Mar 22, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/01335
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.