Method and apparatus for nonvolatile memory
US7115942B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Dec 8, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Dec 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0416
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for nonvolatile memory device. The device has a strain source, an injection filter, a tunneling gate, a ballistic gate, a charge storage region, a source, and a drain with a channel defined between the source and drain. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism. The injection filter permits transporting of charge carriers of one polarity type from the tunneling gate through the blocking material and the ballistic gate to the charge storage region while blocking the transport of charge carriers of an opposite polarity from the ballistic gate to the tunneling gate. The present invention further provides an energy band engineering method permitting the memory device be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.