Circuitry for image sensors with avalanche photodiodes
US7115963B2 · kind B2 · utility
10Cited by
1References
2Claims
0Family size
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Key dates
| Filing date | Jun 1, 2005 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Jun 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/773
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In-pixel circuit architectures for CMOS image sensors are disclosed, which are suitable for avalanche photo-diodes operating either in linear or in non-linear mode. These architectures apply in particular to photo-diodes and image sensors in which CMOS devices are fabricated on thin-film silicon-on-insulator substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.