Nanowire varactor diode and methods of making same
US7115971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Oct 5, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.