Jian Chen
41Patents
15h-index
42Co-inventors
81Inventor score
Filing activity: Aug 11, 1999 → Oct 27, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7374807B2 | Nanocrystal doped matrixes | Emerging Cross-Sectional Technologies | 146 | Expired |
| US7064372B2 | Large-area nanoenabled macroelectronic substrates and uses therefor | Electricity | 108 | Expired |
| US7135728B2 | Large-area nanoenabled macroelectronic substrates and uses therefor | Emerging Cross-Sectional Technologies | 101 | Expired |
| US7067867B2 | Large-area nonenabled macroelectronic substrates and uses therefor | Electricity | 81 | Expired |
| US7115971B2 | Nanowire varactor diode and methods of making same | Emerging Cross-Sectional Technologies | 80 | Expired |
| US7091120B2 | System and process for producing nanowire composites and electronic substrates therefrom | Emerging Cross-Sectional Technologies | 42 | Expired |
| US7233041B2 | Large-area nanoenabled macroelectronic substrates and uses therefor | Emerging Cross-Sectional Technologies | 42 | Active |
| US7473943B2 | Gate configuration for nanowire electronic devices | Emerging Cross-Sectional Technologies | 30 | Expired |
| US9169435B2 | Highly luminescent nanostructures and methods of producing same | Emerging Cross-Sectional Technologies | 27 | Active |
| US7932511B2 | Large-area nanoenabled macroelectronic substrates and uses therefor | Emerging Cross-Sectional Technologies | 24 | Active |
| US7871870B2 | Method of fabricating gate configurations for an improved contacts in nanowire based electronic devices | Emerging Cross-Sectional Technologies | 19 | Active |
| US7339184B2 | Systems and methods for harvesting and integrating nanowires | Emerging Cross-Sectional Technologies | 18 | Expired |
| US8030186B2 | Large-area nanoenabled macroelectronic substrates and uses therefor | Emerging Cross-Sectional Technologies | 17 | Active |
| US9631141B2 | Highly luminescent nanostructures and methods of producing same | Emerging Cross-Sectional Technologies | 16 | Active |
| US7667296B2 | Nanowire capacitor and methods of making same | Emerging Cross-Sectional Technologies | 15 | Active |
| US7701014B2 | Gating configurations and improved contacts in nanowire-based electronic devices | Emerging Cross-Sectional Technologies | 14 | Active |
| US7468315B2 | System and process for producing nanowire composites and electronic substrates therefrom | Emerging Cross-Sectional Technologies | 13 | Active |
| US9884993B2 | Highly luminescent nanostructures and methods of producing same | Emerging Cross-Sectional Technologies | 13 | Active |
| US7851841B2 | Large-area nanoenabled macroelectronic substrates and uses therefor | Emerging Cross-Sectional Technologies | 12 | Active |
| US7795125B2 | System and process for producing nanowire composites and electronic substrates therefrom | Emerging Cross-Sectional Technologies | 11 | Active |
| US7427328B2 | Large-area nanoenabled macroelectronic substrates and uses therefor | Emerging Cross-Sectional Technologies | 11 | Active |
| US10707371B2 | Highly luminescent nanostructures and methods of producing same | Emerging Cross-Sectional Technologies | 8 | Active |
| US8030161B2 | Gate electrode for a nonvolatile memory cell | Electricity | 8 | Active |
| US8293624B2 | Large area nanoenabled macroelectronic substrates and uses therefor | Emerging Cross-Sectional Technologies | 8 | Active |
| US10056533B2 | Quantum dot encapsulation techniques | Emerging Cross-Sectional Technologies | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.