Semiconductor device and method of manufacturing the same
US7115999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Jun 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has an active element structure formed on a semiconductor substrate. The active element has a connection region formed on a surface of the semiconductor substrate. An insulating film is formed on the semiconductor substrate. A connection hole is formed in the insulating film, and has a bottom connected with the connection region. An interconnect trench is formed in the insulating film, and has a bottom connected with the connection region. A first conductive film is filled in a first region ranging from the connection region in the connection hole to a first height, and is composed of an alloy containing CoW or NiW. A second conductive film is formed in the interconnect trench, and is electrically connected with the first conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.