Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems
US7116411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Dec 2, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70525
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target p…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.