ASML Masktools B.V.
88Patents
53Active
88Granted
44Portfolio score
Filing activity: Dec 6, 2000 → Mar 5, 2013 · 45 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7175940B2 | Method of two dimensional feature model calibration and optimization | Physics | 264 | Expired |
| US6553562B2 | Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques | Physics | 192 | Expired |
| US6792591B2 | Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs | Physics | 133 | Expired |
| US6881523B2 | Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features | Physics | 112 | Expired |
| US6738859B2 | Method and apparatus for fast aerial image simulation | Physics | 46 | Expired |
| US6753954B2 | Method and apparatus for detecting aberrations in a projection lens utilized for projection optics | Physics | 42 | Expired |
| US6788400B2 | Method and apparatus for detecting aberrations in an optical system | Physics | 39 | Expired |
| US7247574B2 | Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography | Physics | 32 | Expired |
| US6519760B2 | Method and apparatus for minimizing optical proximity effects | Physics | 30 | Expired |
| US6851103B2 | Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography | Physics | 26 | Expired |
| US8050898B2 | Method, program product and apparatus for predicting line width roughness and resist pattern failure and the use thereof in a lithography simulation process | Physics | 25 | Active |
| US7242459B2 | Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated Eigen decomposition model | Physics | 22 | Expired |
| US7138212B2 | Method and apparatus for performing model-based layout conversion for use with dipole illumination | Physics | 22 | Expired |
| US7246342B2 | Orientation dependent shielding for use with dipole illumination techniques | Physics | 22 | Expired |
| US8111921B2 | Method and apparatus for performing model-based OPC for pattern decomposed features | Physics | 19 | Active |
| US7550235B2 | Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography | Physics | 18 | Active |
| US7355673B2 | Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout | Physics | 18 | Expired |
| US6915505B2 | Method and apparatus for performing rule-based gate shrink utilizing dipole illumination | Physics | 18 | Expired |
| US7116411B2 | Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems | Physics | 17 | Expired |
| US7342646B2 | Method of manufacturing reliability checking and verification for lithography process using a calibrated eigen decomposition model | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6875545B2 | Method of removing assist features utilized to improve process latitude | Physics | 15 | Expired |
| US7292315B2 | Optimized polarization illumination | Physics | 15 | Expired |
| US7864301B2 | Source and mask optimization by changing intensity and shape of the illumination source | Physics | 14 | Active |
| US7231629B2 | Feature optimization using enhanced interference mapping lithography | Physics | 14 | Expired |
| US7620930B2 | Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography | Physics | 13 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.