Sensing the state of a storage cell including a magnetic element
US7116576B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Mar 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/024
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device includes memory cells each including a magnetic element, where the memory cells include a first memory cell connected between a first voltage and a sense node, and at least second and third memory cells connected in parallel between the sense node and a reference voltage. A sampling circuit is coupled to the sense node, with the sampling circuit configured to receive a first voltage sample corresponding to an original state of the first memory cell, and to store a second voltage sample corresponding to a known state of the first memory cell after the first memory cell has been written to the known state. A differential amplifier compares the first and second voltage samples in their analog forms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.