Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate
US7118934B2 · kind B2 · utility
11Cited by
1References
35Claims
0Family size
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Key dates
| Filing date | Apr 12, 2004 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Dec 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A porous substrate for epitaxial growth includes an underlying layer made of III-nitride semiconductor which is grown on a sapphire substrate, a void-formation preventive layer which is grown on the underlying layer, a porous III-nitride semiconductor layer and a porous metallic layer on the porous III-nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.