Method of forming a conductive structure
US7118998B1 · kind B1 · utility
3Cited by
11References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2004 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Sep 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming a plurality of trenches between the first and second regions, implanting a dopant into the bottom surfaces of the trenches, and then annealing the wafer to cause the dopant at the bottom surfaces to diffuse and form a continuous conductive path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.