Semiconductor local interconnect and contact
US7119005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2005 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Jan 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit is provided. A gate dielectric and a gate are provided respectively on and over a semiconductor substrate. A junction is formed adjacent the gate dielectric and a shaped spacer is formed around the gate. A spacer is formed under the shaped spacer and a liner is formed under the spacer. A first dielectric layer is formed over the semiconductor substrate, the shaped spacer, the spacer, the liner, and the gate. A second dielectric layer is formed over the first dielectric layer. A local interconnect opening is formed in the second dielectric layer down to the first dielectric layer. The local interconnect opening in the first dielectric layer is opened to expose the junction in the semiconductor substrate and the first gate. The local interconnect openings in the first and second dielectric layers are filled with a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.