Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion
US7119016B2 · kind B2 · utility
7Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Oct 15, 2003 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Oct 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)4-nSiXn wherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH4) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.